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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 701
  • PTB20125
  • Ericsson Microelectronics AB
  • 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor
  • 5页
  • 235K
  • 702
  • PTB20134
  • Ericsson Microelectronics AB
  • 30 Watts, 860-900 MHz Cellular Radio RF Power Transistor
  • 2页
  • 42K
  • 703
  • PTC1111-90
  • YCL Electronics Corporation, Ltd.
  • LAN 10/100BASE T Non-Shield RJ45 Jack With Magnetic module
  • 5页
  • 56K
  • 704
  • PTF10009
  • Ericsson Microelectronics AB
  • 85 Watts, 1.0 GH GOLDMOS Field Effect Transistor
  • 6页
  • 228K
  • 705
  • PTF10015
  • Ericsson Microelectronics AB
  • 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
  • 6页
  • 221K
  • 706
  • PTF10019
  • Ericsson Microelectronics AB
  • 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
  • 6页
  • 369K
  • 707
  • PTF10020
  • Ericsson Microelectronics AB
  • 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
  • 7页
  • 431K
  • 708
  • PTF10021
  • Ericsson Microelectronics AB
  • 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor
  • 6页
  • 278K
  • 709
  • PTF10031
  • Ericsson Microelectronics AB
  • 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
  • 6页
  • 215K
  • 710
  • PTF10036
  • Ericsson Microelectronics AB
  • 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
  • 6页
  • 220K
  • 711
  • PTF10043
  • Ericsson Microelectronics AB
  • 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor
  • 6页
  • 693K
  • 712
  • PTF10045
  • Ericsson Microelectronics AB
  • GOLDMOS Field Effect Transistor 30 Watts, 1.60 - 1.65 GHz
  • 6页
  • 110K
  • 713
  • PTF10048
  • Ericsson Microelectronics AB
  • 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
  • 6页
  • 347K
  • 714
  • PTF10052
  • Ericsson Microelectronics AB
  • 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
  • 6页
  • 498K
  • 715
  • PTF10053
  • Ericsson Microelectronics AB
  • GOLDMOS Field Effect Transistor 12 Watts, 2.0 GHz
  • 6页
  • 97K
  • 716
  • PTF10065
  • Ericsson Microelectronics AB
  • 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor
  • 6页
  • 94K
  • 717
  • PTF10100
  • Ericsson Microelectronics AB
  • 165 Watts, 860-900 MHz LDMOS Field Effect Transistor
  • 6页
  • 163K
  • 718
  • PTF10107
  • Ericsson Microelectronics AB
  • GOLDMOS Field Effect Transistor 5 Watts, 2.0 GHz
  • 6页
  • 93K
  • 719
  • PTF10111
  • Ericsson Microelectronics AB
  • GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz
  • 6页
  • 107K
  • 720
  • PTF10112
  • Ericsson Microelectronics AB
  • 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor
  • 6页
  • 324K
  • 721
  • PTF10119
  • Ericsson Microelectronics AB
  • GOLDMOS Field Effect Transistor 12 Watts, 2.1-2.2 GHz
  • 4页
  • 201K
  • 722
  • PTH05020WAH
  • Texas Instruments Incorporated
  • 22 A, 5 V Input Non-Isolated Wide-Output Adjust Power Module
  • 8页
  • 183K
  • 723
  • PTH05020WAS
  • Texas Instruments Incorporated
  • 22 A, 5 V Input Non-Isolated Wide-Output Adjust Power Module
  • 8页
  • 183K
  • 724
  • PTH05020WAST
  • Texas Instruments Incorporated
  • 22 A, 5 V Input Non-Isolated Wide-Output Adjust Power Module
  • 8页
  • 183K
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