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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1001
  • IRF7474
  • International Rectifier Corp.
  • HEXFET Power MOSFET
  • 8页
  • 224K
  • 1002
  • IRF7474TR
  • International Rectifier Corp.
  • HEXFET Power MOSFET
  • 8页
  • 224K
  • 1003
  • IRFM250
  • International Rectifier Corp.
  • Power MOSFET
  • 7页
  • 163K
  • 1004
  • IRFZ44L
  • International Rectifier Corp.
  • HEXFET Power MOSFET
  • 10页
  • 325K
  • 1005
  • IRFZ44S
  • International Rectifier Corp.
  • HEXFET Power MOSFET
  • 10页
  • 325K
  • 1006
  • IRGB420U
  • International Rectifier Corp.
  • INSULATED GATE BIPOLAR TRANSISTOR
  • 6页
  • 102K
  • 1007
  • IRGP420U
  • International Rectifier Corp.
  • UltraFast IGBT
  • 7页
  • 109K
  • 1008
  • IRGPS40B120U
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 10页
  • 111K
  • 1009
  • IXFN340N07
  • IXYS Corporation
  • HiPerFET Power MOSFET Single Die MOSFET
  • 4页
  • 154K
  • 1010
  • IXTH5N100
  • IXYS Corporation
  • Standard Power MOSFET
  • 6页
  • 214K
  • 1011
  • IXTH5N100A
  • IXYS Corporation
  • Standard Power MOSFET
  • 6页
  • 214K
  • 1012
  • IXTM5N100
  • IXYS Corporation
  • Standard Power MOSFET
  • 6页
  • 214K
  • 1013
  • IXTM5N100A
  • IXYS Corporation
  • Standard Power MOSFET
  • 6页
  • 214K
  • 1014
  • IC62C256-45T
  • Integrated Circuit Solution Inc.
  • 32k x 8 Low Power CMOS Static RAM
  • K
  • 1015
  • IC62C256-45TI
  • Integrated Circuit Solution Inc.
  • 32k x 8 Low Power CMOS Static RAM
  • K
  • 1016
  • IC62C256-45U
  • Integrated Circuit Solution Inc.
  • 32k x 8 Low Power CMOS Static RAM
  • K
  • 1017
  • IC62C256-45UI
  • Integrated Circuit Solution Inc.
  • 32k x 8 Low Power CMOS Static RAM
  • K
  • 1018
  • IC62C256-70T
  • Integrated Circuit Solution Inc.
  • 32k x 8 Low Power CMOS Static RAM
  • K
  • 1019
  • IC62C256-70TI
  • Integrated Circuit Solution Inc.
  • 32k x 8 Low Power CMOS Static RAM
  • K
  • 1020
  • IC62C256-70U
  • Integrated Circuit Solution Inc.
  • 32k x 8 Low Power CMOS Static RAM
  • K
  • 1021
  • IC62C256-70UI
  • Integrated Circuit Solution Inc.
  • 32k x 8 Low Power CMOS Static RAM
  • K
  • 1022
  • IDT72V11165L15TFI
  • Integrated Device Technology, Inc.
  • 3.3 V Multimedia FIFO 256 x 16
  • 8页
  • 123K
  • 1023
  • IDT72V12165L15TFI
  • Integrated Device Technology, Inc.
  • 3.3 V Multimedia FIFO 512 x 16
  • 8页
  • 123K
  • 1024
  • IDT72V13165L15TFI
  • Integrated Device Technology, Inc.
  • 3.3 V Multimedia FIFO 1,024 x 16
  • 8页
  • 123K
  • 1025
  • IDT72V14165L15TFI
  • Integrated Device Technology, Inc.
  • 3.3 V Multimedia FIFO 2,048 x 16
  • 8页
  • 123K
  • 1026
  • IDT72V15165L15TFI
  • Integrated Device Technology, Inc.
  • 3.3 V Multimedia FIFO 4,096 x 16
  • 8页
  • 123K
  • 1028
  • JANTX2N7225
  • International Rectifier Corp.
  • Power MOSFET
  • 7页
  • 163K
  • 1029
  • JANTXV2N7225
  • International Rectifier Corp.
  • Power MOSFET
  • 7页
  • 163K
  • 1030
  • JCIQ-176M
  • Mini-Circuits
  • I&Q MODULATOR
  • 2页
  • 109K
  • 1031
  • JCIQ-88M
  • Mini-Circuits
  • I&Q MODULATOR
  • 2页
  • 109K
  • 1032
  • KSC2881
  • Fairchild Semiconductor
  • NPN Epitaxial Silicon Transistor
  • 4页
  • 142K
  • 1033
  • KTA2400
  • KEC
  • EPITAXIAL PLANAR PNP TRANSISTOR
  • 3页
  • 77K
  • 1034
  • K4M51323LE-EC1H
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1035
  • K4M51323LE-EC1L
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1036
  • K4M51323LE-EC80
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1037
  • K4M51323LE-EF1H
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1038
  • K4M51323LE-EF1L
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1039
  • K4M51323LE-EF80
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1040
  • K4M51323LE-EL1H
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1041
  • K4M51323LE-EL1L
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1042
  • K4M51323LE-EL80
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1043
  • K4M51323LE-MC1H
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1044
  • K4M51323LE-MC1L
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1045
  • K4M51323LE-MC80
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1046
  • K4M51323LE-MF1H
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1047
  • K4M51323LE-MF1L
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1048
  • K4M51323LE-MF80
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1049
  • K4M51323LE-ML1H
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
  • 1050
  • K4M51323LE-ML1L
  • Samsung Semiconductor, Inc.
  • 4M x 32 Bit x 4 Banks Mobile SDRAM in 90FBGA
  • 12页
  • 141K
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热门型号: PMS 832 0038 PH 6012 PMS 436 0050 SL PSL-PCB 6306 PMS 256 0025 SL NY PMS 440 0075 PH PMS 256 0075 SL NBX-10952 PSL-1024 HMSSS 632 0038 NY PMS 440 0050 PH R30-1610800 PMS 632 0031 PH R40-6000502 US-4014 R30-6010602 PMS 256 0050 SL 33708 NY PMS 256 0050 PH R40-6000402 33518 R30-1000502 NY PMS 440 0025 PH HMSSS 632 0100 PSL-MLD-CRIMP PMS 440 0063 PH 7346 PSL-1008 R30-6011002 HMSSS 440 0100 US-4016 NY PMS 256 0025 PH PSL-GLBN NY PMS 832 0038 PH R30-6010302 R30-1611400 6106 6006 R40-6001002